俞明,周于华,朱倩,顾丽芬,李月铃.半导体激光在深龋治疗中的临床效果[J].口腔材料器械杂志,2013,22(4):219-221.
半导体激光在深龋治疗中的临床效果
Department of Oral Medicine,Shanghai Jiading Dental Diseases Prevention and Cure Center, Shanghai 201822
投稿时间:2013-03-18  修订日期:2013-07-19
DOI:10.11752/j.kqcl.2013.04.14
中文关键词:  深龋  半导体激光仪  止痛  继发龋
英文关键词:Deep caries  Semiconductor laser  Pain relief  Secondary caries
基金项目:上海市嘉定区科委资助项目 (2008) jkk030
作者单位E-mail
俞明 上海市嘉定区牙病防治所口腔内科, 上海 201822 davyym@sina.com 
周于华 上海市嘉定区牙病防治所口腔内科, 上海 201822  
朱倩 上海市嘉定区牙病防治所口腔内科, 上海 201822  
顾丽芬 上海市嘉定区牙病防治所口腔内科, 上海 201822  
李月铃 上海市嘉定区牙病防治所口腔内科, 上海 201822  
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中文摘要:
      目的: 探讨半导体激光机在深龋治疗中的止痛和降低继发龋的作用。方法: 选择年龄30~50岁,全身健康状况良好,90位患者的96颗深龋患牙。分成2组,每组48颗患牙。实验组使用半导体激光照射,对照组使用局部麻醉,比较2组的止痛效果;并于治疗后1年、2年、3年后分别复查其继发龋的发生情况,对比两组治疗时的止痛效果以及继发龋的发生率。结果: 实验组止痛有效的患牙有35颗、对照组有36颗,2组之间的差异无统计学意义(P>0.05);治疗后1年、2年、3年复查,实验组继发龋发生率分别为7.3%、10.3%和16.2%,对照组分别为23.7%、30.6%和37.1%。2组继发龋发生率在统计学上有显著性差异(P<0.05)。所有复查牙齿均未出现牙髓炎症状。结论: 半导体激光仪照射深龋牙后,有止痛效果;并能有效提高牙齿防龋能力,降低继发龋。
英文摘要:
      Objective: To study the pain relief effect and preventive effect of secondary caries of semiconductor laser irradiation intreating deep caries. Methods: 96 teeth with deep caries from 90 patients with normal health condition and without chronicle disease, aged between 30to 50years old were selected. Among them, 48 teeth were treated by laserir radiation therapy, named as the laser group, and the other 48 teeth were treated after local anesthesia, named as the anesthesia group. The pain relief effects o f the two groups were compared. All of the patients were recalled annually unti l3 years after treatment, and the incidencerates of secondary caries of the two groups were evaluated and compared. Results: There was no significant difference(P>0.05) between the pain relief rates of the laser group and that of the anethesia group. The number of effectively pain relieved teeth in the laser group and anesthesia were 35 and 36 respectively. There was signiifcant difference(P<0.05)between the incidence rate of secondary caries of the laser group and that of the anesthesia Group. The incidencerates of secondary caries of the laser group after 1 year, 2 years and 3 years were 7.3%, 10.3% and 16.2% respectively. While those of the anesthesia group were 23.7%, 30.6% and 37.1% respectively. None of these teeth showed pulpitis symptom. Conclusion: semiconductor laser irradiation can effectively relieve the pain during treating teeth with deep caries, decrease the susceptibility of the teeth to the caries has and lower the incidence of secondary caries.
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